Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices
M Razeghi - The European Physical Journal-Applied Physics, 2003 - cambridge.org
The properties of Sb-based III-V semiconductor compounds for optoelectronic applications
in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were …
in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were …
Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy
Synthesis of the Tl–V binaries and In–Tl–V alloys has been investigated using gas-source
molecular beam epitaxy. With this approach, neither the binary nor ternary Tl-containing …
molecular beam epitaxy. With this approach, neither the binary nor ternary Tl-containing …
New infrared materials and detectors
In this paper, we present an overview of the growth of InAs1-xSbx, In1-xT1xSb, and (InP) 1-x
(T1P3) x as potential materials for longwavelength (8-12 μm) infrared photodetector …
(T1P3) x as potential materials for longwavelength (8-12 μm) infrared photodetector …
[HTML][HTML] Thermodynamic analysis of the Ga-N system
AV Davydov, TJ Anderson - III-V Nitride Materials and Processes …, 1999 - books.google.com
The experimental thermochemical and phase diagram data for the Ga-N system have been
critically assessed utilizing the CALPHAD (CALculation of Phase Diagrams) method. A …
critically assessed utilizing the CALPHAD (CALculation of Phase Diagrams) method. A …
MOCVD growth of high quality GaN AlGaN based structures on Al2O3 substrates with dislocation density less than 107cm− 2
We report the MOCVD growth of high quality GaN/AlGaN heterostructures on (00· 1)
sapphire substrates with a density of screw and mixed dislocations less than~ 107 cm− 2. 50 …
sapphire substrates with a density of screw and mixed dislocations less than~ 107 cm− 2. 50 …
Antimony-based infrared materials and devices
CEA Grigorescu, RA Stradling - Thin Films, 2001 - Elsevier
Publisher Summary This chapter discusses the new achievements in the field of infrared
devices based on antimony compounds. On comparison with other materials systems …
devices based on antimony compounds. On comparison with other materials systems …
Breaking the bond at cryogenic temperatures using atomic hydrogen. Adsorbed trimethylgallium reactivity
DB Mawhinney, JA Glass Jr, JT Yates Jr - Journal of Vacuum Science & …, 1999 - pubs.aip.org
The chemical interaction of adsorbed trimethylgallium and atomic hydrogen was
investigated on a powdered silicon dioxide substrate containing various coverages of …
investigated on a powdered silicon dioxide substrate containing various coverages of …
Growth and characterization of GaTlAs
MJ Antonell, B Gila, K Powers… - Journal of Vacuum …, 2000 - pubs.aip.org
The growth of GaTlAs has been attempted by gas source molecular beam epitaxy using a
variety of growth conditions. At substrate temperatures⩾ 275° C a two-phase mixture of …
variety of growth conditions. At substrate temperatures⩾ 275° C a two-phase mixture of …
Applications of bis (imino) acenaphthene and investigation of boron arsenide as a high thermal conductivity material
DA Evans - 2015 - repositories.lib.utexas.edu
Functionalization of the ubiquitous bis (imino) acenaphthene ligand class has been
explored. The successful functionalization of this ligand type was found to be dependent …
explored. The successful functionalization of this ligand type was found to be dependent …
Growth of Tl-containing III-V materials by gas-source molecular beam epitaxy
MJ Antonell, CR Abernathy, A Sher… - Conference …, 1997 - ieeexplore.ieee.org
The synthesis of the Tl-V binaries and In-Tl-V alloys have been investigated using gas-
source molecular beam epitaxy. With this approach, neither the binary nor ternary Tl …
source molecular beam epitaxy. With this approach, neither the binary nor ternary Tl …