An image sensor for short-wavelength light includes a semiconductor membrane, circuit
elements formed on one surface of the semiconductor membrane, and a pure boron layer on …

(57) ABSTRACT A method of inspecting a sample at high speed includes directing and
focusing radiation onto a sample, and receiving radiation from the sample and directing …

0001 1. Field of the Invention 0002 The present invention relates to an anti-reflective coating
(ARC), and in particular to an ARC for sensors in high throughput inspection systems. 0003 …

(57) ABSTRACT A high sensitivity image sensor comprises an epitaxial layer of silicon that
is intrinsic or lightly p doped (Such as a doping level less than about 10 cm). CMOS or CCD …

US8456410B2 - Backlight control using light sensors with infrared suppression - Google
Patents US8456410B2 - Backlight control using light sensors with infrared suppression …

An image sensor for short-wavelength light includes a semiconductor membrane, circuit
elements formed on one surface of the semiconductor membrane, and a pure boron layer on …

An embodiment relates to a sensor integrated on a semicon ductor Substrate and
comprising at least one first and second photodiode including at least one first and one …

An embodiment relates to a sensor being integrated on a semiconductor substrate and
comprising at least a vertical double-junction photodiode, in turn comprising at least one first …

An image sensor utilizes a pure boron layer and a second epitaxial layer having ap-type
dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing …

Pixel aperture size adjustment in a linear sensor is achieved by applying more negative
control voltages to central regions of the pixel's resistive control gate, and applying more …