A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …

In this paper, a capacitive RF MEMS switch working in shunt configuration is designed and
optimized using FEM software. An electrostatically actuated fixed–fixed type shunt switch is …

This paper presents the design and analysis of a microstrip circular patch antenna,
integrated with the RF-MEMS capacitive type switch. Here, two different types of RF-MEMS …

With the development of satellite communications, military radar and other fields, the
demand for terahertz (0.1-10THz) tunable devices is growing, of which the switches are the …

This paper presents the design a capacitive shunt type RF-MEMS switch with high isolation,
high switching speed and low actuation voltage for Ka-band applications. The proposed RF …

The manufacturing process of planar microsprings by the UV-LIGA process was introduced;
the mechanism of fabrication error was analyzed from three process stages of exposure, SU …

This paper presents the design and analysis of the RF-MEMS Capacitive type switch. Here,
we have proposed different stages of shunt switches for better performance. The objective of …

This paper presents design and simulation of RF-MEMS capacitive type shunt switch. The
main parameters of electromagnetic and electromechanical analysis are performed by …

This article describes the fabrication and experimental results of a novel step structure Radio
Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular …

This paper presents the design and simulation of shunt type switch with meanders and
perforations. The proposed switch is utilizing silicon nitride (Si 3 N 4) as a dielectric material …