A capacitive type of RF micro-switch with silicon nitride (Si 3 N 4) as dielectric layer and a
unique shaped spring has been presented in this paper for high frequency applications upto …

The artificial intelligence-based MEMS switch designs have been led technology in present
micro-electronic applications. The 4G and 5G communication hardware networks have …

The performance of FinFET design is the newest technology compared to conventional bulk
FinFET and nanowire gate-all-around (GAA) FET, three-dimensional simulations have been …

This paper explores the effect of scaling for low energy and high efficiency of demand and
as difficulties of SOI circuits designing. This paper presents a 45-nm SOI MOSFET design …

Wireless communication has witnessed rapid developments over the past few years. The
highly compact RF circuits, invokes the benefits of miniaturized size, high performance, low …

In this paper, the effect of perforations on both pull-in voltage and S-parameters have been
studied experimentally and compared with the simulation results of perforated and non …

Aim: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two
different insulating substrates. Objective: Numerical investigation of return loss, insertion …

A variable MEMS capacitor for Ka band frequency is designed having high capacitance
ratio, less pull-in voltage, less stress misses, and better quality factor. MEMS varactor can be …

High motional resistance and incompatibility with post-CMOS fabrication due to thermal
budget constraints are imperative issues associated with the back-end-of-line integration of …

De nouveaux réseaux d'adaptation (RA) d'impédance reconfigurables en fréquence, ou
syntoniseurs, qui peuvent être utilisés pour réaliser divers dispositifs RF programmables …