Investigation of trap density effect in gate-all-around field effect transistors using the finite element method
M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023 - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …
capture and release charge carriers (electrons or holes) in a semiconductor channel …
Ditch incorporated organic thin film transistor based organic all-p inverter: a novel approach
This paper demonstrates the static and dynamic characteristics of all-p organic inverter
employing a bottom gate bottom contact organic thin film transistor with a ditch incorporated …
employing a bottom gate bottom contact organic thin film transistor with a ditch incorporated …
PSP-Equivalent Model for Double-Gate and Surrounding-Gate Field Effect Transistors for Circuit Simulation
L Colalongo, S Comensoli, A Richelli - Electronics, 2024 - mdpi.com
We introduce a compact core model for double-gate (DGFET) and surrounding-gate
(SGFET) MOSFETs designed for circuit simulations. Despite its high precision, the model is …
(SGFET) MOSFETs designed for circuit simulations. Despite its high precision, the model is …