Fluorination of TiN, TiO2, and SiO2 Surfaces by HF toward Selective Atomic Layer Etching (ALE)

JH Jung, H Oh, B Shong - Coatings, 2023 - mdpi.com
As semiconductor devices become miniaturized, the importance of the molecular-level
understanding of the fabrication processes is growing. Titanium nitride (TiN) is an important …

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

AA Hossain, H Wang, DS Catherall, M Leung… - Journal of Vacuum …, 2023 - pubs.aip.org
Microwave loss in superconducting TiN films is attributed to two-level systems in various
interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer …

Atomic layer etching of titanium nitride with surface modification by Cl radicals and rapid thermal annealing

N Miyoshi, N McDowell, H Kobayashi - Journal of Vacuum Science & …, 2022 - pubs.aip.org
Thermal atomic layer etching (ALE) is a promising method for isotropic etching with atomic
level precision and high conformality over three-dimensional structures. In this study, a …

[HTML][HTML] Future of plasma etching for microelectronics: Challenges and opportunities

GS Oehrlein, SM Brandstadter, RL Bruce… - Journal of Vacuum …, 2024 - pubs.aip.org
Plasma etching is an essential semiconductor manufacturing technology required to enable
the current microelectronics industry. Along with lithographic patterning, thin-film formation …

[HTML][HTML] Atomic Layer Etching of SiO2 for Nanoscale Semiconductor Devices: A Review

D Hong, Y Kim, H Chae - Applied Science and Convergence Technology, 2024 - e-asct.org
In this paper, atomic layer etching (ALE) processes for SiO 2 are reviewed and categorized
into two distinct group of anisotropic and isotropic ALE processes. Anisotropic ALE typically …