Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
Using one material system from the near infrared into the ultraviolet is an attractive goal, and
may be achieved with (In, Al, Ga) N. This III-N material system, famous for enabling blue and …
may be achieved with (In, Al, Ga) N. This III-N material system, famous for enabling blue and …
Terahertz probe of photoexcited carrier dynamics in the Dirac semimetal
The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac
semimetals is vital towards their application in high-performance electronic and …
semimetals is vital towards their application in high-performance electronic and …
Amplification or cancellation of Fano resonance and quantum confinement induced asymmetries in Raman line-shapes
Fano resonance is reported here to be playing a dual role by amplifying or compensating for
the quantum confinement effect induced asymmetry in Raman line-shape in silicon (Si) …
the quantum confinement effect induced asymmetry in Raman line-shape in silicon (Si) …
[HTML][HTML] Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition
Indium nitride (InN) is a highly promising material for high frequency electronics given its low
bandgap and high electron mobility. The development of InN-based devices is hampered by …
bandgap and high electron mobility. The development of InN-based devices is hampered by …
Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition
In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays
(HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated …
(HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated …
Observation of surface plasmon polaritons in 2D electron gas of surface electron accumulation in InN nanostructures
Recently, heavily doped semiconductors have been emerging as an alternative to low-loss
plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property …
plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property …
Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride
E Poliani, D Seidlitz, M Ries, SJ Choi… - The Journal of …, 2020 - ACS Publications
We report a detailed study of the strong near-field Raman scattering enhancement, which
takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the …
takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the …
Extracting electron densities in n-type GaAs from Raman spectra: Comparisons with Hall measurements
MA Ochoa, JE Maslar, HS Bennett - Journal of applied physics, 2020 - pubs.aip.org
We demonstrate quantitatively how values of electron densities in GaAs extracted from
Raman spectra of two samples depend on models used to describe electric susceptibility …
Raman spectra of two samples depend on models used to describe electric susceptibility …
Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering
We investigate the compositional homogeneity of InGaN thin films with a high In content
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …
Sulfur-assisted synthesis of indium nitride nanoplates from indium oxide
L Wang, Y Pan, Q Shen, J Zhang, K Bao, Z Lou… - RSC …, 2016 - pubs.rsc.org
Indium nitride (InN) is much more difficult to prepare than other group III nitrides for its low
thermal stability. Here, InN nanoplates are prepared by using In2O3, NaNH2 and sulfur as …
thermal stability. Here, InN nanoplates are prepared by using In2O3, NaNH2 and sulfur as …