Opto-spintronics in InP using ferromagnetic tunnel spin filters
C Caspers, D Yoon, M Soundararajan… - New Journal of …, 2015 - iopscience.iop.org
We demonstrate opto-spintronics using Fe-doped Indium Phosphide (InP). The method is
based on optical orientation of InP conduction electron spins which are electrically detected …
based on optical orientation of InP conduction electron spins which are electrically detected …
Optical properties of sulfur doped InP single crystals
Optical properties of InP: S single crystals were investigated using spectrophotometric
measurements in the spectral range of 200–2500 nm. The absorption coefficient and …
measurements in the spectral range of 200–2500 nm. The absorption coefficient and …
[PDF][PDF] 半绝缘InP 中深能级缺陷对电学性质的影响和缺陷的控制
赵有文， 董志远， 李成基， 段满龙， 孙文荣 - 半导体学报, 2006 - jos.ac.cn
综合深能级缺陷和电学性质的测试结果, 证明了半绝缘InP 单晶材料的电学性能, 热稳定性,
均匀性等性能与材料中一些深能级缺陷的含量密切相关. 通过分析深能级缺陷产生的规律与 …
均匀性等性能与材料中一些深能级缺陷的含量密切相关. 通过分析深能级缺陷产生的规律与 …
[PDF][PDF] 生长条件及退火处理对磷化铟单晶结构完整性的影响
赵有文， 董宏伟 - 半导体学报, 2005 - jos.ac.cn
摘要'利用A 射线双晶衍射# A] N% 技术研究了原生及退火处理后的磷化铟单晶的晶格完整性2
原生磷化铟单晶中由于存在着大量的位错和高的残留热应力$ 导致晶格产生很大的畸变 …
原生磷化铟单晶中由于存在着大量的位错和高的残留热应力$ 导致晶格产生很大的畸变 …
Influence of Growth and Annealing Conditions on Perfection of InP Single Crystals
Z Youwen, D Hongwei - Journal of Semiconductors, 2005 - jos.ac.cn
X-ray double crystal diffracrion (XRD) is used to study the lattice perfection of as-grown and
annealed InP single crystals. The full width at half maximum (FWHM) of XRD of as-grown …
annealed InP single crystals. The full width at half maximum (FWHM) of XRD of as-grown …