Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
[HTML][HTML] Silicon: Quantum dot photovoltage triodes
Silicon is widespread in modern electronics, but its electronic bandgap prevents the
detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its …
detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its …
Recent progress of III–V quantum dot infrared photodetectors on silicon
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
O Supplie, O Romanyuk, C Koppka, M Steidl… - Progress in Crystal …, 2018 - Elsevier
The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …
since it is strongly desired in various high-efficiency applications ranging from …
[HTML][HTML] Recent Progress in III–V Photodetectors Grown on Silicon
C Zeng, D Fu, Y Jin, Y Han - Photonics, 2023 - mdpi.com
An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …
[HTML][HTML] Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot pin photodiode grown on on-axis (001) GaP/Si
We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) pin photodiodes
(PDs) grown on on-axis (001) GaP/Si substrates. A 3.0× 50 μm 2 QD PD shows a small dark …
(PDs) grown on on-axis (001) GaP/Si substrates. A 3.0× 50 μm 2 QD PD shows a small dark …
Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators
Efficient photodetectors (PDs) and lasers are critical components in silicon photonics
technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) …
technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) …
Vertical InGaAs nanowire array photodiodes on Si
K Chiba, A Yoshida, K Tomioka, J Motohisa - ACS Photonics, 2019 - ACS Publications
We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically
responsive to visible light (635 nm) and near-infrared light (∼ 1.55 μm). The vertical NWs …
responsive to visible light (635 nm) and near-infrared light (∼ 1.55 μm). The vertical NWs …
Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors
We report silicon waveguide butt-coupled pin InGaAs photodetectors epitaxially grown on
silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs …
silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs …