Trace amounts of Mg deposited on a diamond (100) substrate surface facilitate the growth of
cubic boron nitride (c‐BN) by ion beam‐assisted molecular beam epitaxy. Fourier transform …

Phase-pure crystalline cubic boron nitride (c-BN) thin films are of immense scientific and
technical interest because of their suitable properties for optoelectronic and high-power …

The phonon properties of cubic boron nitride (cBN) with ultrahigh thermal conductivity have
always been of great concern. Generally, due to the anharmonic effect, phonons undergo …

The high strength of boron carbide (B4C) is essential in its engineering applications such as
wear‐resistance and body armors. Here, by employing density functional theory simulations …

Lithium (Li)‐doped boron carbide (B4C) has generated widespread attention for its potential
to enhance mechanical properties. Nevertheless, the influence of the Li solid solution on the …

Hexagonal boron nitride (h-BN) is attracting significant attention as an ultimate dielectric and
active layer in multifunctional 2D heterostructured devices because of its high bandgap and …

Recently we reported the formation of diamond and a new phase of Q-carbon, harder than
diamond, on sapphire (0001) substrates by direct conversion of amorphous carbon layers by …

This study demonstrates a novel laser processing technique for the direct conversion of
amorphous boron nitride (a-BN) into phase-pure cubic boron nitride (c-BN) nanoneedles. c …

The tremendous device architecture scale down has made it essential to locally fabricate
nanomaterials, while rest of the wafer remains at ambient conditions. Keeping this in mind …

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising
nanofabrication techniques for building nano-electronic devices due to their outstanding …