Comprehensive study on RF-MEMS switches used for 5G scenario

LY Ma, N Soin, MHM Daut, SFWM Hatta - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents a comprehensive study on radio frequency-microelectromechanical
systems (RF-MEMS) switches, which are expected to be extensively integrated into 5G …

[HTML][HTML] Novel high isolation and high capacitance ratio RF MEMS switch: design, analysis and performance verification

Z Deng, Y Wang, K Deng, C Lai, J Zhou - Micromachines, 2022 - mdpi.com
In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-
electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated …

Electromagnetic modelling and analysis of RF MEMS capacitive shunt switch for 5G applications

CG Chand, R Maity, NP Maity - Microelectronics Journal, 2021 - Elsevier
This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS
Shunt switch. The S parameters are investigated with different analysis such as changing …

[HTML][HTML] Design and fabrication of a Ka band RF MEMS switch with high capacitance ratio and low actuation voltage

K Deng, F Yang, Y Wang, C Lai, K Han - Micromachines, 2021 - mdpi.com
In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is
designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal …

Subthreshold performance analysis of germanium source dual halo dual dielectric triple material surrounding gate tunnel field effect transistor for ultra low power …

M Venkatesh, M Suguna, NB Balamurugan - Journal of Electronic …, 2019 - Springer
An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric
Triple Material Surrounding Gate Tunnel FET Ge (SRC)-DH-DD-TM-SG-TFET is proposed …

Low pull-in-voltage RF-MEMS shunt switch for 5G millimeter wave applications

PA Kumar, KS Rao, B Balaji, M Aditya, NP Maity… - … on electrical and …, 2021 - Springer
RF MEMS switches have been employed in many commercial and defense applications due
to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF …

A novel design of a low-voltage low-loss T-match RF-MEMS capacitive switch

LY Ma, AN Nordin, N Soin - Microsystem Technologies, 2018 - Springer
This paper presents a novel design, optimization and analysis of capacitive radio frequency
(RF) micro-electromechanical system (MEMS) switch. The design incorporates a novel …

Comprehensive study of RF analysis of G/GO-based NEMS shunt switch

R Chaudhary, PR Mudimela - Microsystem Technologies, 2022 - Springer
High isolation and low insertion loss are the key design parameters for the NEMS switch at
high frequency. The comprehensive study of radio frequency (RF) performance analysis of …

Fabrication Process Improvement of High Isolation of RF MEMS Switch for 5G Applications

A Bajpai, K Rangra, D Bansal - Sensors and Actuators A: Physical, 2024 - Elsevier
For 5 G applications, isolation of better than-40 dB is required to prevent cross-talk between
adjacent channels. Isolation of reported Radio Frequency (RF.) Microelectromechanical …

Finite element analysis of graphene oxide hinge structure-based RF NEM switch

R Chaudhary, P Jhanwar… - IETE Journal of Research, 2023 - Taylor & Francis
The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to
get optimum device dimensions. The present work deals with the design and simulation of …