Z Deng, Y Wang, K Deng, C Lai, J Zhou - Micromachines, 2022 - mdpi.com
In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro- electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated …
This paper presents the Electromagnetic modelling and simulation analysis of an RF MEMS Shunt switch. The S parameters are investigated with different analysis such as changing …
K Deng, F Yang, Y Wang, C Lai, K Han - Micromachines, 2021 - mdpi.com
In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal …
An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge (SRC)-DH-DD-TM-SG-TFET is proposed …
PA Kumar, KS Rao, B Balaji, M Aditya, NP Maity… - … on electrical and …, 2021 - Springer
RF MEMS switches have been employed in many commercial and defense applications due to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF …
LY Ma, AN Nordin, N Soin - Microsystem Technologies, 2018 - Springer
This paper presents a novel design, optimization and analysis of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switch. The design incorporates a novel …
High isolation and low insertion loss are the key design parameters for the NEMS switch at high frequency. The comprehensive study of radio frequency (RF) performance analysis of …
For 5 G applications, isolation of better than-40 dB is required to prevent cross-talk between adjacent channels. Isolation of reported Radio Frequency (RF.) Microelectromechanical …
The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to get optimum device dimensions. The present work deals with the design and simulation of …