EnforceSNN: Enabling resilient and energy-efficient spiking neural network inference considering approximate DRAMs for embedded systems

RVW Putra, MA Hanif, M Shafique - Frontiers in Neuroscience, 2022 - frontiersin.org
Spiking Neural Networks (SNNs) have shown capabilities of achieving high accuracy under
unsupervised settings and low operational power/energy due to their bio-plausible …

Aging-aware request scheduling for non-volatile main memory

S Song, A Das, O Mutlu, N Kandasamy - … of the 26th Asia and South …, 2021 - dl.acm.org
Modern computing systems are embracing non-volatile memory (NVM) to implement high-
capacity and low-cost main memory. Elevated operating voltages of NVM accelerate the …

Intelligent architectures for intelligent computing systems

O Mutlu - 2021 Design, Automation & Test in Europe …, 2021 - ieeexplore.ieee.org
Computing is bottlenecked by data. Large amounts of application data overwhelm storage
capability, communication capability, and computation capability of the modern machines …

Reliability issues in flash-memory-based solid-state drives: Experimental analysis, mitigation, recovery

Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu - Inside Solid State Drives …, 2018 - Springer
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

Understanding power consumption and reliability of high-bandwidth memory with voltage underscaling

SSN Larimi, B Salami, OS Unsal… - … , Automation & Test …, 2021 - ieeexplore.ieee.org
Modern computing devices employ High-Bandwidth Memory (HBM) to meet their memory
bandwidth requirements. An HBM-enabled device consists of multiple DRAM layers stacked …

Revisiting row hammer: A deep dive into understanding and resolving the issue

H Wang, X Peng, Z Liu, X Huang, T Li, B Yang… - Microelectronics …, 2024 - Elsevier
Row hammer is a vulnerability in Dynamic Random Access Memory (DRAM) chips, whereby
repeatedly accessing a specific row in the DRAM chip may cause bit flips in memory cells …

Workload-aware dram error prediction using machine learning

L Mukhanov, K Tovletoglou… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
The aggressive scaling of technology may have helped to meet the growing demand for
higher memory capacity and density, but has also made DRAM cells more prone to errors …

Can ternary computing improve information assurance?

B Cambou, PG Flikkema, J Palmer, D Telesca… - Cryptography, 2018 - mdpi.com
Modern computer microarchitectures build on well-established foundations that have
encouraged a pattern of computational homogeneity that many cyberattacks depend on. We …

PreLatPUF: Exploiting DRAM latency variations for generating robust device signatures

BMSB Talukder, B Ray, D Forte, MT Rahman - IEEE Access, 2019 - ieeexplore.ieee.org
Physically unclonable functions (PUFs) are potential security blocks to generate unique and
more secure keys in low-cost cryptographic applications. Dynamic random-access memory …

Random and adversarial bit error robustness: Energy-efficient and secure DNN accelerators

D Stutz, N Chandramoorthy, M Hein… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Deep neural network (DNN) accelerators received considerable attention in recent years
due to the potential to save energy compared to mainstream hardware. Low-voltage …