Exciton recombination and spin dynamics in (In, Al) As/AlAs quantum dots (QDs) with
indirect band gap and type-I band alignment were studied. The negligible (less than 0.2 …

The vacancy generation dynamics in doped semiconductor heterostructures with quantum
dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate …

Electric field control of spin polarity in spin injection into InGaAs quantum dots (QDs) from a
tunnel-coupled quantum well (QW) was studied. The degree of freedom of the spin state in …

The suppression of a thermally excited electron-spin relaxation in InGaAs quantum dots
(QDs) using p-doped capping layers toward enhanced room-temperature (RT) spin …

Asymmetric spin relaxation induced by the residual electron spin in semiconductor quantum
dots (QDs) adjacent to a superlattice (SL) was studied using spin-and time-resolved …

Single InP-based quantum dots emitting in the third telecom window are probed quasi-
resonantly in polarization-resolved microphotoluminescence experiments. For charged …

Enhanced hetero-dimensional electron-spin injection in a resonantly tunnel-coupled InGaAs
quantum dot (QD)–well (QW) nanosystem has been demonstrated. Photo-excited spin …

When this paper is completed, I sincerely appreciate my supervisor, Professor Akihiro
Murayama, for his instruction, discussions, and supports. High levels of research that …

We demonstrate electric-field control of optical-spin injection from an In 0.1 Ga 0.9 As
quantum well (QW) to p-doped In 0.5 Ga 0.5 As quantum dots (QDs), where spin-polarized …

We study effects of p-doping on excited spin dynamics of InGaAs quantum dots (QDs) by
circularly polarized time-resolved photoluminescence (PL). At excited states of p-doped …