For the next technological generations of integrated circuits, the traditional challenges faced
by etch plasmas (profile control, selectivity, critical dimensions, uniformity, defects,…) …

Earlier [1, 2] work highlighted an integrated process for electrically functional 12 nm half-
pitch copper interconnects in an ultralow-k interlayer dielectric (ILD). In this paper, we focus …

Commonly known in macroscale mechanics, buckling phenomena are now also
encountered in the nanoscale world as revealed in today's cutting-edge fabrication of …

The patterning of a 34 nm metal pitch interconnect was realized using a spacer-based pitch
quartering scheme. The pattern is transferred into an ultralow-k ILD using a process that …

Amorphous carbon hard mask films grown with plasma enhanced chemical vapor
deposition are an enabling technology for advanced front-end-of-line patterning …

The patterning of narrow trenches in porous SiOCH with a metallic hard mask can lead to
the undulation of the dielectric lines between the trenches, also called wiggling. This …

Mechanical failures of back-end-of-line (BEoL) interconnects represent a critical yield and
reliability concern for integrating new materials such as ultralow-permittivity (ultralow-k) …

A process to achieve 12 nm half-pitch interconnect structures in ultralow-k interlayer
dielectric (ILD) is realized using standard 193 nm lithography. An optimized pattern transfer …

To clarify whether pattern waviness due to line-edge-roughness enhances wiggling,
distortion of straight and wavy patterns was numerically analyzed by the three-dimensional …

We have measured surface acoustic waves on nanostructured TiN wires overlaid on
multiple thin films on a silicon substrate using the ultrafast pump-probe technique known as …