We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1− xInxN alloys
used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of …

Lattice-matched Al 1− x In x N/GaN heterostructures with InN mole fraction (x) of 0.18 have
attracted considerable interest for use in GaN-based optoelectronic devices. Because the …

A record-long room-temperature photoluminescence (PL) lifetime (⁠ τ PL RT⁠) of
approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm …

The impacts of pulsed-flow growth on aluminium incorporation in polar (0001), semipolar
(103) and (112), as well as nonpolar (100) AlGaN layers have been investigated. The layers …

Immiscible semiconductors are of premier importance since the source of lighting has been
replaced by white light-emitting-diodes (LEDs) composed of thermodynamically immiscible …

We investigate the photovoltaic performance of solar cells based on n-AlxIn1− xN (x= 0–
0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlxIn1− xN …

AlxIn1− xN ternary semiconductors have attracted much interest for application in
photovoltaic devices. Here, we compare the material quality of AlxIn1− xN layers deposited …

In this study, we report the indium incorporation efficiency and structural quality of nonpolar
(101̅0) and semipolar (202̅1) InAlN layers grown by plasma-assisted molecular beam …

Semipolar {11 2¯ 2} AlInN layers with thicknesses of≈ 0.4 μm are grown on a fully relaxed
semipolar Ga0. 9In0. 1N/GaN/m‐plane sapphire template by metalorganic chemical vapor …

III–V GaN‐based nitride semiconductors have attracted interest because their bandgaps can
be tuned by constructing alloys and superlattices, and by applying lattice strain. Herein, the …