This paper reviews our previous theoretical studies on the simulation and modeling of
resistively switching electrochemical metallization memory devices. The focus is on the …

Electrochemical metallization-based two-dimension-al (2D) material memristors with vertical
transport and small inter-electrode distances have been reported recently. Their device …

Electrochemical metallization (ECM) cells are based on the principle of voltage controlled
formation or dissolution of a nanometer-thin metallic conductive filament (CF) between two …

The demand for energy-efficient, fast, and small electronic memories is steadily rising in
today's information technology. Redox-based resistive switching memories (ReRAM) based …

Transition metal dichalcogenide (TMD) memris-tors with vertical transport and atomic scale
inter-electrode distances have recently been reported. These devices demonstrate bipolar …

The scaling of solid state memory demands an ever continuing progress in memory device
concepts as well as utilization of materials with properties superior to the state of the art …

The most impressive properties of the human brain are widely acknowledged as being
perception and consciousness. While the underlying mechanisms are not yet understood, it …

Electrochemical metallization-based two dimensional (2D) material memristors with vertical
transport and small inter-electrode distances have been reported recently. Their device …

(57) ABSTRACT A storage device includes: a first electrode; a storage layer including an ion
Source layer, and a second electrode. The first electrode, the storage layer, and the second …

RRAM has recently emerged as a strong candidate for non-volatile memory (NVM). Beyond
memory applications, RRAM holds promise for use in performing logic functions, mimicking …