Efficacy of ion implantation in zinc oxide for optoelectronic applications: A review

A Das, D Basak - ACS Applied Electronic Materials, 2021 - ACS Publications
Unlike the majority of the silicon-based electronic devices, optoelectronic devices are
predominantly made using III–V and II–VI semiconductor compounds and their alloys …

Clustered vacancies in ZnO: chemical aspects and consequences on physical properties

S Pal, N Gogurla, A Das, SS Singha… - Journal of Physics D …, 2018 - iopscience.iop.org
The chemical nature of point defects, their segregation, cluster or complex formation in ZnO
is an important area of investigation. The evolution of a defective state with MeV Ar ion …

Size dependent radiation-stability of ZnO and TiO2 particles

J Lv, J Yang, X Li, Z Chai - Dyes and Pigments, 2019 - Elsevier
ZnO and TiO 2 particles are typical pigments used in solar reflective coatings. In this letter,
the radiation stability of ZnO and TiO 2 particles within submicron (several hundred nm) and …

Hydrogenation process enhances radiation‑stability of ZnO, Ga2O3 and TiO2

T Lu, J Lv, C Wang - Journal of Alloys and Compounds, 2022 - Elsevier
Synthesizing metal oxide semiconductors with radiation hardness are of significance for
their potential application in harsh radiative environments. Herein, ZnO, Ga 2 O 3 and TiO 2 …

Defect evolution in ZnO and its effect on radiation tolerance

J Lv, X Li - Physical Chemistry Chemical Physics, 2018 - pubs.rsc.org
The origin of ZnO radiation resistance is fascinating but still unclear. Herein, we found that
radiation tolerance of ZnO can be tuned by engineering intrinsic defects into the ZnO. The …

Effects of Pre-Annealing on the Radiation Resistance of ZnO Nanorods

T Wu, A Wang, M Wang, Y Wang, Z Liu, Y Hu, Z Wu… - Crystals, 2022 - mdpi.com
Ion implantation is usually used for semiconductor doping and isolation, which creates
defects in semiconductors. ZnO is a promising semiconductor and has a variety of …

Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

A Azarov, A Galeckas, E Wendler, J Ellingsen… - Journal of Applied …, 2017 - pubs.aip.org
Post-implantation annealing is typically used to remove structural defects and electrically
activate implanted dopants in semiconductors. However, ion-induced defects and their …

Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature

A Azarov, E Wendler, E Monakhov… - Journal of Applied …, 2018 - pubs.aip.org
Despite the fact that nitrogen is a potential acceptor dopant and one of the most studied
elements in ZnO, lacking understanding of associated defects and their thermal evolution …

Characterization of nanofilms of ZnO and MnO semiconductors in radiotherapy beams

CPV Valença - inis.iaea.org
The advancement of nanotechnology encourages researches to develop innovative sensors
and techniques for measuring several physical quantities and providing new applications …

Caracterização de nanofilmes de semicondutores de ZnO e MnO em feixes de radioterapia

CPV VALENÇA - 2019 - repositorio.ufpe.br
O avanço da nanotecnologia estimula os pesquisadores a desenvolverem aplicações nas
mais diversas áreas de conhecimento buscando a melhoria de técnicas de medição de …