Recently, III-V semiconductor nanowires have been widely explored as promising
candidates for high-performance photodetectors due to their one-dimensional morphology …

Band-selective infrared photodetectors (PDs) are constructed with InAs (x) P (1-x) alloy
nanowires from the complete composition range (0≤ x≤ 1) achieved by a new growth route …

In this chapter, optoelectronic properties of semiconductor nanowires, the fundament of the
nanowire optoelectronic devices, will be analyzed. This chapter focuses on the …

The excitonic radiative transitions of InAs x P 1− x (x= 0.13 and x= 0.40) alloy epitaxial layers
were studied through magnetic field and temperature dependent photoluminescence and …

InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111) B and (100)
substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

Electronic transport properties of strain-relaxed Si-doped In As y P 1− y layers with arsenic
mole fractions between y= 0.05 and y= 0.50 were studied. All layers were grown on semi …

InAs x P1− x/InP strained quantum well structures have been prepared by atmospheric‐
pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x …

InAs x P 1-x with x ranging form 0 to 0.60 has been heteroepitaxially deposited on InP.
Organometallic vapor phase epitaxy was carried out in a horizontal, atmospheric pressure …

Hall-effect measurements were performed in the temperature range of 10-400 K on
degenerate n-type polycrystalline InAs x P 1− x films deposited on glass substrates by …