Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

To fully take the high-frequency advantage of gallium nitride (GaN) devices, this article
presents a face-up integrated power module based on the printed circuit board embedding …

A five-degree-of-freedom (5-DOF) modulation scheme is proposed in this article for dual
active bridge converter to improve its efficiency in a wide operation range. First, the possible …

Catalyzed by the increasing interest in bi-directional electric vehicles, this paper delves into
their significance and the challenges they encounter. Bi-directional electric vehicles not only …

Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

The switching oscillations caused by the high-speed switching and low-damping
characteristics of SiC mosfet seriously deteriorate its high-reliability applications. By viewing …

The switching oscillations and voltage overshoots excited by ultrafast switching transients
are urgently required to be overcome for SiC mosfet. Herein, the C-RC snubber is employed …

Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

The snubber circuit is a cost-effective solution to reduce the severe turn-off overvoltage and
oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-on …