Promising lithography techniques for next-generation logic devices

RMM Hasan, X Luo - Nanomanufacturing and Metrology, 2018 - Springer
Continuous rapid shrinking of feature size made the authorities to seek alternative patterning
methods as the conventional photolithography comes with its intrinsic resolution limit. In this …

Enhancing performance and function of polymethacrylate extreme ultraviolet resists using area-selective deposition

RA Nye, K Van Dongen, D De Simone, H Oka… - Chemistry of …, 2023 - ACS Publications
Extreme ultraviolet (EUV) lithography is a critical enabler in next-generation technology,
although the low etch resistance of conventional organic EUV resists results in low …

Effects of an organotin compound on radiation-induced reactions of extreme-ultraviolet resists utilizing polarity change and radical crosslinking

S Enomoto, T Yoshino, K Machida… - Japanese Journal of …, 2018 - iopscience.iop.org
Non-chemically amplified resists (non-CARs) are generally less sensitive to radiation than
CARs due to the lack of an amplification mechanism. Recently, a negative-type non-CAR …

Stochastics in extreme ultraviolet lithography: investigating the role of microscopic resist properties for metal-oxide-based resists

R Maas, MC van Lare, G Rispens… - Journal of Micro …, 2018 - spiedigitallibrary.org
Due to the high energy of extreme ultraviolet (EUV) photons, stochastic effects become more
important at a constant dose when compared with deep ultraviolet exposures. Photoresists …

Compatibility between polymethacrylate-based extreme ultraviolet resists and area-selective deposition

RA Nye, K Van Dongen, H Oka… - Journal of Micro …, 2022 - spiedigitallibrary.org
Background Extreme ultraviolet (EUV) lithography is crucial to achieving smaller device
sizes for next-generation technology, although organic resists face substantial challenges …

Co and terpolymer reactivity ratios of chemically amplified resists

NS Pujari, M Wang, KE Gonsalves - Polymer, 2017 - Elsevier
Resists are important multicomponent system require in microelectronic industry for
fabrication of integrated circuit (IC) devices. The current high end IC (integrated circuit) …

Study of electron-beam and extreme-ultraviolet resist utilizing polarity change and radical crosslinking

S Enomoto, T Kozawa - Journal of Vacuum Science & Technology B, 2018 - pubs.aip.org
Resists used for the fabrication of next-generation of semiconductor circuits must exhibit
resolution better than 10 nm and sensitivity comparable to or better than that of chemically …

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

C Popescu, A Frommhold, A McClelland… - Extreme Ultraviolet …, 2017 - spiedigitallibrary.org
Irresistible Materials is developing a new molecular resist system that demonstrates high-
resolution capability based on the multi-trigger concept. A series of studies such as resist …

Improving polymethacrylate EUV resists with TiO2 area-selective deposition

RA Nye, K Van Dongen, H Oka… - Advances in …, 2022 - spiedigitallibrary.org
Extreme ultraviolet (EUV) lithography is crucial to achieving smaller device sizes for next-
generation technology, although organic resists face substantial challenges, such as low …

High-speed near-field photolithography at 16.85 nm linewidth with linearly polarized illumination

J Ji, Y Meng, Y Hu, J Xu, S Li, G Yang - Optics Express, 2017 - opg.optica.org
Plasmonic focusing was investigated in concentric rings with a central pillar under linearly
polarized illumination with a specific incident angle. When changing the incident angle of …