Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier
This paper examines the performance of a Gate-Engineered Gate-All-Around Charge
Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the …
Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and the …
Influence of gate material, geometry, and temperature on ISFET performance in pH sensing applications
Ion-sensitive field-effect transistors (ISFET) are used in various sensing applications
including electrochemical biosensing. In this study, analytical models of Ta2O5, Si3N4, and …
including electrochemical biosensing. In this study, analytical models of Ta2O5, Si3N4, and …
Analog/RF performance analysis of a-ITZO thin film transistor
This work reports RF and analog performance analysis of an amorphous Indium Tin Zinc
Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT …
Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT …
Improvement of Ion, Electric Field and Transconductance of TriGate FinFET by 5nm Technology
In present days, the improved performance in nanoscale dimensions is of enormous need
than conventional CMOS devices. This paper presents an insight into Trigate FinFET in 5 nm …
than conventional CMOS devices. This paper presents an insight into Trigate FinFET in 5 nm …
Device design, simulation and qualitative analysis of gaasp/6h-sic/gan metal semiconductor field effect transistor
B Balaji, KS Rao, M Aditya, KG Sravani - Silicon, 2022 - Springer
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …
effect transistor with undoped region under gate. The device is made of semiconductor …
A survey on the latest FET technology for samsung industry
In semiconductor electronics firms like Samsung, field effect transistor (FET) technology is
the main design layout for high-performance applications. Gate-all-around (GAA) FETs …
the main design layout for high-performance applications. Gate-all-around (GAA) FETs …
Design, performance analysis of gaas/6h-sic/algan metal semiconductor fet in submicron technology
B Balaji, KS Rao, KG Sravani, M Aditya - Silicon, 2022 - Springer
A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
Low Threshold Voltage MOSFET-A Potential Candidate for Biomedical IC Design
MZA Emon, MIB Chowdhury - 2024 International Conference …, 2024 - ieeexplore.ieee.org
As the world is progressing, futuristic innovation demand is testing the limits of design
related to analog circuits. Thus design with traditional MOSFET is becoming more complex …
related to analog circuits. Thus design with traditional MOSFET is becoming more complex …
Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET
J Molina-Reyes, AM Cuellar-Juarez - Nanotechnology, 2023 - iopscience.iop.org
By using a simple device architecture along with a simple process design and a low thermal-
budget of a maximum of 100 C for passivating metal/semiconductor interfaces, a Schottky …
budget of a maximum of 100 C for passivating metal/semiconductor interfaces, a Schottky …
A python implementation based lattice Boltzmann method for thermal behavior analysis in silicon carbide MOSFET
In the new global industrial sector, electronics systems efficiency has become a central issue
should be improved. Recently, there has been renewed interest for addressing this …
should be improved. Recently, there has been renewed interest for addressing this …