Review of the nanoscale FinFET device for the applications in nano-regime

SU Haq, VK Sharma - Current Nanoscience, 2023 - ingentaconnect.com
Background: The insatiable need for low-power and high-performance integrated circuit (IC)
results in the development of alternative options for metal oxide semiconductor field effect …

Effects of binary hybrid nanofluid on heat transfer and fluid flow in a triangular-corrugated channel: An experimental and numerical study

OA Alawi, HM Kamar, OA Hussein, AR Mallah… - Powder Technology, 2022 - Elsevier
The flow and heat transfer over a modulated surface in the form of triangular protrusions
using MWCNTs-TiO 2 nanohybrids were investigated, and its results are detailed in this …

Complementary FET (CFET) standard cell design for low parasitics and its impact on VLSI prediction at 3-nm process

E Park, T Song - IEEE Transactions on Very Large Scale …, 2022 - ieeexplore.ieee.org
Complementary field-effect transistor (CFET) is a future transistor type with a high potential
to be used beyond 3-nm technology nodes. Despite its high future value, studies related to …

Hydrothermal and energy analysis of flat plate solar collector using copper oxide nanomaterials with different morphologies: Economic performance

OA Alawi, HM Kamar, AH Abdelrazek… - Sustainable Energy …, 2022 - Elsevier
Flat plate solar collectors (FPSCs) have gotten a lot of attention in the last decade because
of their ease of installation and design. The current study focused on numerical aspects of a …

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET (DM‐HK‐SNWFET)

S Sharma, V Nath, SS Deswal… - International Journal of …, 2024 - Wiley Online Library
This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and
uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface …

The Artificial Neuron: Built From Nanosheet Transistors to Achieve Ultra Low Power Consumption

IM Sheriff, R Sakthivel - IEEE Access, 2024 - ieeexplore.ieee.org
The performance of semiconductors has greatly improved due to the miniaturization of the
transistor. To shrink the size of a transistor, the channel length must be decreased. Short …

Tunnel Field Effect Transistor (TFET): A Review

FA Omar, TM Abdolkader - International Journal of Materials …, 2024 - journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompanied
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …

[PDF][PDF] Design and Modeling of InxGa (As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

H Liu, X Chen, NS Garigapati - 2023 - lup.lub.lu.se
The advancement of CMOS technology has been fueled by the need to satisfy Moore's law
by shrinking transistors to progressively smaller sizes and increasing the transistor density …

[PDF][PDF] Tunnel field effect transistor (TFET): A review

FA Ali, TM Abdolkader - ijmti.journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompany
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) due to their …

Thermal and Electrical Performance of Negative Capacitance FinFET on GaAs

Z Yu, T Jia, C Zhang, H Li, L Liu, S Yu… - 2022 23rd International …, 2022 - ieeexplore.ieee.org
Along with the COVID-19 pandemic and the large-scale application of 5G, IoT has become
more critical for our daily lives. GaAs is a promising semiconductor for field effect transistors …