The electrical properties of Au/p-CdZnTe contacts with different surface treatments,
especially passivation treatment, are investigated in this paper. After the passivation, a TeO …

Pixelated CdZnTe detectors can achieve 3D position reconstruction, which enables 471-
Compton imaging of gamma rays with a single detector and energy resolution better than …

Among III–V and II–VI bulk semiconductor materials, currently being studied for their
photorefractive PR properties, CdTe has been demonstrated to be very promising for …

Spectrometer-grade CdTe single crystals with resistivities higher than 10 9 Ω cm have been
grown by the modified Bridgman method using zone-refined precursor materials (Cd and …

An Indium (In) doped Cd0. 9Zn0. 1Te (CdZnTe: In) ingot was grown by vertical Bridgman
method. The distribution of In in the ingot was analyzed. It was evaluated that the …

Three Cd1− xZnxTe ingots with x values of 0.10, 0.15, and 0.20 were, respectively, grown by
vertical Bridgman method (VBM). Characterization indicated that Cd0. 85Zn0. 15Te …

Experimental studies have been conducted to investigate the influence of dislocations on
the properties of CdZnTe crystals. Dislocations were introduced into CdZnTe wafers by …

Cd1− xZnxTe crystals were grown by the temperature gradient solution growth (TGSG).
Optical properties of the Cd1− xZnxTe crystals were investigated by the photoluminescence …

Photoluminescence (PL) and infrared transmission spectra are used to characterize In-
doped Cd 0.9 Zn 0.1 Te (CdZnTe: In). The PL spectrum reveals that there are two other …

The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals
and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied …