US10573550B2 - Semiconductor on insulator structure comprising a plasma oxide layer and
method of manufacture thereof - Google Patents US10573550B2 - Semiconductor on insulator …

(74) Attorney, Agent, or Firm—Slater Matsil, LLP (57) ABSTRACT Embodiments of
mechanisms for forming power gating cells and virtual power circuits on multiple active …

A multilayer composite structure and a method of preparing a multilayer composite structure
are provided. The multilayer composite structure comprises a semiconductor handle …

The disclosed method is suitable for producing a SiGe-on-insulator structure. According to
some embodiments of the method, a layer comprising SiGe is deposited on silicon-on …

the present inventions are directed to an integrated circuit, and layout thereof, including a
multiplexer—memory cell circuit wherein input-selection of the multiplexer is determined by …

A semiconductor structure including a bottom source drain region arranged on a substrate, a
semiconductor channel region extending vertically upwards from a top surface of the bottom …

NOESYZHRGYRDHS-UHFFFAOYSA-N insulin Chemical compound N1C (= O) C (NC (= O)
C (CCC (N)= O) NC (= O) C (CCC (O)= O) NC (= O) C (C (C) C) NC (= O) C (NC (= O) CN) C …

A semiconductor on insulator multilayer structure is provided. The multilayer comprises a
high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or …

US11145538B2 - High resistivity silicon-on-insulator structure and method of manufacture thereof
- Google Patents US11145538B2 - High resistivity silicon-on-insulator structure and method of …

(57) ABSTRACT A multilayer composite structure and a method of preparing a multilayer
composite structure are provided. The multilayer composite structure comprises a …