High sensitivity detection of glucose with negatively charged gold nanoparticles functionalized the gate of AlGaN/GaN High Electron Mobility Transistor
J Liu, H Zhang, X Xiaochuan, D Xue, H Huang… - Sensors and Actuators A …, 2020 - Elsevier
Highlights•A simple functionalization process of APTES/AuNPs/GOx on the gate region of
AlGaN/GaN high electron mobility transistor.•An enzymatic glucose biosensor with high …
AlGaN/GaN high electron mobility transistor.•An enzymatic glucose biosensor with high …
Low temperature photoluminescence study for identification of intersubband energy levels inside triangular quantum well of AlGaN/GaN heterostructure
RK Kaneriya, C Karmakar, MK Sahu, PK Basu… - Microelectronics …, 2023 - Elsevier
A non-destructive method for extracting the true signatures of intersubband energy level
states inside a single triangular quantum well for AlGaN/GaN heterostructure is presented …
states inside a single triangular quantum well for AlGaN/GaN heterostructure is presented …
Low-temperature and ammonia-free epitaxy of the GaN/AlGaN/GaN heterostructure
DM Tobaldi, V Triminì, A Cretì… - ACS Applied …, 2021 - ACS Publications
Wide band-gap semiconductors are very attractive because of their broad applications as
electronics and optoelectronics materials, GaN-based materials being by far the most …
electronics and optoelectronics materials, GaN-based materials being by far the most …
Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
L Méchin, F Médard, J Leymarie, S Bouchoule… - Physical Review B, 2024 - APS
The polarization discontinuity across interfaces in polar nitride-based heterostructures can
lead to the formation of two-dimensional electron and hole gases. In the past, the …
lead to the formation of two-dimensional electron and hole gases. In the past, the …
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic
measurements under novel experimental configurations. Distinct features related to the …
measurements under novel experimental configurations. Distinct features related to the …
Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN
S Schmult, VV Solovyev, S Wirth, A Großer… - Journal of Vacuum …, 2019 - pubs.aip.org
Landau level splitting in a two-dimensional electron gas (2DEG) confined in an ultrapure
GaN/AlGaN heterostructure grown by molecular beam epitaxy on bulk GaN is verified …
GaN/AlGaN heterostructure grown by molecular beam epitaxy on bulk GaN is verified …
Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer
Abstract Effect of partial Mg doping on the compensation of unintentional donors at
epilayer/template interface and in the GaN channel layer of AlGaN/GaN High Electron …
epilayer/template interface and in the GaN channel layer of AlGaN/GaN High Electron …
Luminescence dynamics in AlGaN with AlN content of 20%
Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have
been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of …
been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of …
Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy
Spatial and spectral origin of deep level defects in molecular beam epitaxy grown
AlGaN/GaN heterostructures are investigated by using surface photovoltage spectroscopy …
AlGaN/GaN heterostructures are investigated by using surface photovoltage spectroscopy …