Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Low temperature dependence of oscillation wavelength in GaAs1-xBix laser by photo-pumping
Y Tominaga, K Oe, M Yoshimoto - Applied Physics Express, 2010 - iopscience.iop.org
Lasing oscillation from a GaAs 1-x Bi x/GaAs semiconductor chip with a Fabry–Perot cavity
is acheived for the first time by photo-pumping. The GaAs 0.975 Bi 0.025 active layer was …
is acheived for the first time by photo-pumping. The GaAs 0.975 Bi 0.025 active layer was …
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix
We investigate the electronic properties of Ga As 1− x Bi x by photoluminescence at variable
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T). In Ga As 0.981 Bi 0.019 …
The effect of Bi composition to the optical quality of GaAs1− xBix
GaAs 1− x Bi x alloys grown by molecular beam epitaxy for x up to 0.06 were studied by
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x< …
Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes
We investigate the temperature and pressure dependence of the light-current characteristics
and electroluminescence spectra of GaAs 1− x Bi x/GaAs light emitting diodes. The …
and electroluminescence spectra of GaAs 1− x Bi x/GaAs light emitting diodes. The …
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
We report the first observation of photoluminescence (PL) from the dilute bismide alloy
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications
KK Nagaraja, YA Mityagin, MP Telenkov… - Critical Reviews in …, 2017 - Taylor & Francis
Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
Structural investigation of GaAs1− xBix/GaAs multiquantum wells
Y Tominaga, Y Kinoshita, K Oe, M Yoshimoto - Applied Physics Letters, 2008 - pubs.aip.org
GaAs 1− x Bi x/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …
mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has …
Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
R Kudrawiec, M Syperek, P Poloczek… - Journal of Applied …, 2009 - pubs.aip.org
The carrier localization phenomenon has been investigated for GaBiAs by photomodulated
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …
Polarized Raman backscattering selection rules for (hhl)-oriented diamond-and zincblende-type crystals
Due to their interesting orientation-dependent properties, the ability to grow high-index
semiconductor crystals and nanostructures extends the design palette for applications …
semiconductor crystals and nanostructures extends the design palette for applications …