GaAsPBi epitaxial layer grown by molecular beam epitaxy
C Himwas, A Soison, S Kijamnajsuk… - Semiconductor …, 2020 - iopscience.iop.org
GaAsPBi is a new class of quaternary III–V compounds that extends the concept of band gap
engineering on GaAs with potentials for lattice matching and excellent temperature stability …
engineering on GaAs with potentials for lattice matching and excellent temperature stability …
Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates
We investigated the growth characteristics and properties of GaAsBi layers grown by
atmospheric-pressure metal–organic vapor-phase epitaxy on different GaAs substrate …
atmospheric-pressure metal–organic vapor-phase epitaxy on different GaAs substrate …
GaAsBi/GaAs MQWs grown by MBE using a two-substrate-temperature technique
PK Patil, F Ishikawa, S Shimomura - Journal of Alloys and Compounds, 2017 - Elsevier
Abstract Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) on (100) GaAs
substrates were grown by molecular beam epitaxy (MBE) using the two-substrate …
substrates were grown by molecular beam epitaxy (MBE) using the two-substrate …
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1− yBiy on offcut and mesa-patterned GaAs substrates
The influence of the surface step termination on the metal-organic vapor phase epitaxy of
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
Bandgap characters in GaAs‐based ternary alloys
The existence and origins of the bowing character in the bandgap variation of GaAs‐based
ternary alloys are theoretically investigated based on two different computational methods …
ternary alloys are theoretically investigated based on two different computational methods …
Temperature‐insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells
Y Tominaga, K Oe, M Yoshimoto - physica status solidi c, 2011 - Wiley Online Library
GaAs1–xBix/GaAs multiquantum wells (MQWs) were grown on GaAs substrate by molecular
beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks …
beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks …
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1) B GaAs substrates
R Kudrawiec, P Poloczek, J Misiewicz, M Shafi… - Microelectronics …, 2009 - Elsevier
In this work, photomodulated transmittance (PT) has been applied to investigate the energy
gap of GaBiAs layers grown on (001) and (311) B GaAs substrates. In PT spectra, a clear …
gap of GaBiAs layers grown on (001) and (311) B GaAs substrates. In PT spectra, a clear …
Structural and optical studies of GaAs1-xBix and p-Bi203 for optoelectronic devices
J Steele - 2015 - ro.uow.edu.au
In this thesis, the optical and structural properties of molecular beam epitaxy (MBE) grown
dilute GaAs1− xBix/GaAs (001)-and (113) B-oriented heterostructures and the laser-induced …
dilute GaAs1− xBix/GaAs (001)-and (113) B-oriented heterostructures and the laser-induced …
Strategic molecular beam epitaxial growth of GaAs/GaAsBi heterostructures and nanostructures
In this chapter, we go over epitaxial growth of bismide thin films, multiple quantum wells, and
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …