In this paper, we present a review of optical and structural studies of $ GaBi_xAs_ {1-x} $
epilayers grown by Molecular Beam Epitaxy (MBE) on (311) B and (001) GaAs substrates …

1 Two-dimensional (2D) carbon materials play an important role in nanomaterials. We
propose a new carbon monolayer, named hexagonal-4, 4, 4-graphyne (H4, 4, 4-graphyne) …

Abstract We have grown GaAsBi/GaAs MQWs on GaAs (411) A and (411) B substrates by
MBE and investigated arsenic pressure dependence of the Bi concentration of GaAsBi …

Abstract Conventional III-V compounds (GaAs/InGaAs/InAlAs) containing a small amount of
bismuth are called dilute bismuthides (aka dilute bismides). They are a relatively new class …

Berrys phase, an inherent constituent of the electronic wave functions, has revolutionarily
enriched our understanding of the fundamental states of matter and has triggered the …

. Also, As content is very high compared to the Bi content so it is anticipated that GaBi-like
mode should be weaker than GaAs-like mode. We may expect GaBi mode intensity …

GaAsBi has recently attracted much attention due to its large band gap reduction, a less
temperature dependence of the band gap, and the giant spin orbiting properties. The large …

This chapter deals with mainly the growth and the structural and optical characteristics of
GaAsBi alloys. Firstly, the growth and the structural characteristic of GaAsBi alloys grown on …

Abstract [eng] The thesis is dedicated to investigation of carrier dynamics in InN, InGaN, and
GaAsBi heterostructures by using light-induced transient gratings and differential …

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V
bismide optoelectronic devices, which are of great importance in modern applications of …