In heavily nitrogen doped GaP, we show how isoelectronic doping results in an impurity
band, and how this is manifested as a large band-gap reduction and an enhanced band …

A brief review of Huang–Rhys theory and Albrechtos theory is provided, and their
connection and applications are discussed. The former is a first order perturbative theory on …

Abstract Strained CdTe-Cd 1− x Zn x Te superlattices are of mixed type: electrons and heavy
holes are confined to the CdTe layers (type I) while light holes are confined to the Cd 1− x Zn …

A brief history of the impurity theories in semiconductors is provided. A bound exciton model
is proposed for both donor-and acceptor-like impurities and point defects, which offers a …

A detailed review on a few important issues related to the isoelectronic impurity nitrogen in III-
V semiconductors GaP and GaAs are given in this article. These issues include (1) the …

At sufficiently high doping levels, the impurities in a semiconductor are expected to perturb
the host band structure, and the perturbed host is then expected to alter the impurity state …

We attempt to clarify an ambiguity in the understanding of the electronic structure of an
acceptor in a semiconductor. Instead of using only a single quantity acceptor binding energy …

The electronic properties of nitrogen pairs have been investigated in dilute Ga P 1− x N x
samples (x⩽ 0.24%) by excitation photoluminescence (PLE) spectroscopy and by …

Using the one-band one-site Koster-Slater model, we explain the different behavior of
isoelectronic impurities in GaAs: N and GaP: N in terms of their band-structure difference …

The configuration coordinate (CC) and momentum conservation (MC) models have been
widely used to explain the phonon sidebands of impurity spectra in semiconductors. In this …