Radiation-induced degradation of silicon carbide MOSFETs–A review
T Baba, NA Siddiqui, NB Saidin, SHM Yusoff… - Materials Science and …, 2024 - Elsevier
Abstract Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
(MOSFETs) have gained significant attention due to their ability to achieve lower on …
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications
P Paramasivam, N Gowthaman, VM Srivastava - Nanomaterials, 2023 - mdpi.com
This research work uses sp3d5s* tight-binding models to design and analyze the structural
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide …
G-Optrode bio-interfaces for non-invasive optical cell stimulation: Design and evaluation
VM Moorthy, P Varatharajan, JD Rathnasami… - Biosensors, 2022 - mdpi.com
Biocompatibility and potential efficacy in biological applications rely on the bio-interactions
of graphene nanoparticles with biological tissues. Analyzing and modulating cellular and …
of graphene nanoparticles with biological tissues. Analyzing and modulating cellular and …
A DFT study of (La2O3)n clusters and effect of Ba, Y and Hf doping for their optoelectronic applications
S Kashyap, K Batra - Molecular Physics, 2024 - Taylor & Francis
(La 2 O 3) n (n= 1-5) clusters have been computationally studied using DFT and TDDFT with
B3LYP functional under hybrid GGA approximation and LANL2DZ basis set. The doping …
B3LYP functional under hybrid GGA approximation and LANL2DZ basis set. The doping …
Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model
P Paramasivam, N Gowthaman, VM Srivastava - Silicon, 2024 - Springer
In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-
TRNW) and the structural characteristics of< 001> orientation using tight-binding models …
TRNW) and the structural characteristics of< 001> orientation using tight-binding models …
Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications
P Paramasivam, N Gowthaman… - Recent Patents on …, 2024 - ingentaconnect.com
Introduction: The electrical behavior of a high-performance Indium Gallium Arsenide (In-
GaAs) wafer-based n-type Double-Gate (DG) MOSFET with a gate length (LG1= LG2) of 2 …
GaAs) wafer-based n-type Double-Gate (DG) MOSFET with a gate length (LG1= LG2) of 2 …
Design Optimization and Characterization with Fabrication of Nanomaterials-Based Photo Diode Cell for Subretinal Implant Application
VM Moorthy, JD Rathnasami, VM Srivastava - Nanomaterials, 2023 - mdpi.com
An ultrathin nano photodiode array fabricated in a flexible substrate can be an ideal
therapeutic replacement for degenerated photoreceptor cells damaged by Age-related …
therapeutic replacement for degenerated photoreceptor cells damaged by Age-related …
Modeling, Optimization, and Simulation of Nanomaterials-Based Organic Thin Film Transistor for Future Use in pH Sensing
VM Moorthy, VS Mohan - Recent Patents on Nanotechnology, 2024 - ingentaconnect.com
Introduction: Applications of Organic Thin Film Transistor (OTFT) range from flexible screens
to disposable sensors, making them a prominent research issue in recent decades. A very …
to disposable sensors, making them a prominent research issue in recent decades. A very …
Geometrical Optimization and Simulation of NPDA Device for Future Use in Retinal Implant
VM Moorthy, VS Mohan - The Journal of Technology …, 2023 - iastatedigitalpress.com
The focus of this research was to improve the device structure and electrode geometry of
nanophotodiode array (NPDA) subretinal implant devices for retinal implants, with the aim to …
nanophotodiode array (NPDA) subretinal implant devices for retinal implants, with the aim to …