We have investigated the midinfrared absorption between confined levels of undoped
InAs/GaAs quantum dots obtained by self-organized growth. The infrared absorption is …

This paper reviews the current developments in the exciting field of self-assembled
semiconductor quantum-dot structures during epitaxial growth of lattice mismatched …

Electronic and singly ionized double donor states confined in a G a A s− A l G a A s coupled
quantum dot-ring were calculated. The proposed model fits the geometry of realistic coupled …

Self-organized growth of InGaAs/GaAs strained epitaxial layers gives rise to an ordered
array of islands via the Stranski-Krastanow growth mode, for misfits> 1.8%. These islands …

Multiphonon processes in a model quantum dot (QD) containing two electronic states and
several optical phonon modes are considered by taking into account both intra-and …

We report measurements of the temperature and intensity dependence of
photoluminescence from self-organized InAs quantum dots grown by molecular-beam …

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …

The photoluminescence of In x Ga 1− x A s/A lx Ga 1− x As quantum disks is investigated by
microscope photoluminescence (PL) and PL excitation spectroscopies. The excited-state …

In this paper we present a review on major advances achieved over the past ten years in the
field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …

Multiexciton complexes in In x Ga 1− x A s/G a A s quantum dots in the weak-confinement
regime have been investigated by photoluminescence spectroscopy at T= 2 K. The lateral …