Magnetoluminescence studies of As self-assembled quantum dots in As matrices
We have studied the photoluminescence spectra of In y Al 1− y As self-assembled quantum
dots in Al x Ga 1− x As matrices with magnetic fields up to B= 40 T. The quantum dot …
dots in Al x Ga 1− x As matrices with magnetic fields up to B= 40 T. The quantum dot …
Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation
We have performed low-temperature photoluminescence (PL), resonant PL (RPL), and PL
excitation (PLE) measurements on different series of self-organized InAs/GaAs quantum …
excitation (PLE) measurements on different series of self-organized InAs/GaAs quantum …
Dependence of the electronic structure of self-assembled (In, Ga) As∕ GaAs quantum dots on height and composition
While electronic and spectroscopic properties of self-assembled In 1− x Ga x As∕ Ga As
dots depend on their shape, height, and alloy compositions, these characteristics are often …
dots depend on their shape, height, and alloy compositions, these characteristics are often …
Resonant spectroscopy of II-VI self-assembled quantum dots: excited states and exciton–longitudinal optical phonon coupling
Using resonantly excited photoluminescence (PL) along with photoluminescence excitation
(PLE) spectroscopies, we study the carrier excitation processes in CdTe∕ ZnTe and …
(PLE) spectroscopies, we study the carrier excitation processes in CdTe∕ ZnTe and …
Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots
P Ramvall, S Tanaka, S Nomura, P Riblet… - Applied physics …, 1999 - pubs.aip.org
We report on an investigation of the coupling between excitons and longitudinal optical
phonons as a function of GaN quantum dot size. Photoluminescence measurements of the …
phonons as a function of GaN quantum dot size. Photoluminescence measurements of the …
Self-assembled quantum dots: five years later
Self-assembled quantum dots (QDs) have been grown with good reproducibility by
molecular beam epitaxy with up to five well-resolved zero-dimensional interband transitions …
molecular beam epitaxy with up to five well-resolved zero-dimensional interband transitions …
Photocarrier recombination in As/As self-assembled quantum dots
S Raymond, S Fafard, S Charbonneau, R Leon… - Physical Review B, 1995 - APS
Ensembles of self-assembled quantum dots (QD's) are investigated using
photoluminescence (PL) and resonant time-resolved PL in the visible spectrum. Faster …
photoluminescence (PL) and resonant time-resolved PL in the visible spectrum. Faster …
Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots
L Chu, M Arzberger, A Zrenner, G Böhm… - Applied physics …, 1999 - pubs.aip.org
We have performed interband photocurrent spectroscopy on self-assembled InAs/GaAs
quantum dots using a graded index separate confinement heterostructure in waveguide …
quantum dots using a graded index separate confinement heterostructure in waveguide …
Strain distribution and optical phonons in InAs/InP self-assembled quantum dots
J Groenen, C Priester, R Carles - Physical Review B, 1999 - APS
The strain distribution in self-assembled InAs/InP (001) quantum dots is calculated, using an
atomistic valence force-field description. Two typical dot shapes are considered. Strain …
atomistic valence force-field description. Two typical dot shapes are considered. Strain …
High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2× 4) surface reconstruction
A Alzeidan, TF Cantalice, KE Sautter, KD Vallejo… - Sensors and Actuators A …, 2024 - Elsevier
We studied the impact of surface reconstruction on the performance of infrared
photodetectors containing InAs/GaAs submonolayer quantum dots (SMLQDs) grown by …
photodetectors containing InAs/GaAs submonolayer quantum dots (SMLQDs) grown by …