To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch
compensation helps to create devices that are smaller than 20 nm. But, with the constant …

The best strategies to transfer nanoholes formed from the self-assembly of Polystyren/
Polymethylmethacrylate (PS/PMMA) based block copolymers into a silicon substrate are …

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …

The authors quantitatively investigated the effects of open area ratio and pattern structure on
fluctuations in critical dimension (ΔCD) and Si recess depth (Δd R). To model these effects …

The ion flux and ion velocity distribution function are studied using a capacitively coupled
radio frequency ion flux probe and a multigrid retarding field analyzer in an HBr/O 2 pulsed …

Microfabrication procedure of piezoelectric micro electro-mechanical systems based on 5
μm thick LiNbO 3 films on SiO 2/Si substrate at wafer scale including deep dry etching of …

Si 3 N 4 spacer etching processes are one of the most critical steps of transistor fabrication
technologies since they must be at the same time very anisotropic to generate straight …

Energetic ion bombardment during plasma etching processes creates latent defects which
play a role as carrier trapping/de-trapping sites in materials. In this study, we investigated the …

The strong impact of synchronized plasma pulsing on an HBr/O 2 silicon pattern etch
process is studied with respect to the continuous process. This article focuses on blanket …