[HTML][HTML] State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
III–V nanowire transistors for low-power logic applications: a review and outlook
III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …
been considered as promising candidates for n-channel materials for post-Si low-power …
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
SH Park, Y Liu, N Kharche, MS Jelodar… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The exponential miniaturization of Si complementary metal–oxide–semiconductor
technology has been a key to the electronics revolution. However, the downscaling of the …
technology has been a key to the electronics revolution. However, the downscaling of the …
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U Singisetti, MA Wistey, GJ Burek… - IEEE Electron …, 2009 - ieeexplore.ieee.org
We report Al 2 O 3 Zln 0.53 Ga 0.47 As MOSFETs having both self-aligned in situ Mo
source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE …
source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE …
Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications
DH Kim, JA Del Alamo - IEEE transactions on electron devices, 2010 - ieeexplore.ieee.org
We have experimentally studied the scaling behavior of sub-100-nm InAs high-electron
mobility transistors (HEMTs) on InP substrate from the logic operation point of view. These …
mobility transistors (HEMTs) on InP substrate from the logic operation point of view. These …
[HTML][HTML] Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) …
The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si)(001) substrate
with 6 off-cut using conventional germane precursor in a metal organic chemical vapour …
with 6 off-cut using conventional germane precursor in a metal organic chemical vapour …
Epitaxial Al-InAs heterostructures as platform for Josephson junction field-effect transistor logic devices
We fabricate Josephson junction field-effect transistors (JJ-FETs) using InAs quantum well
heterostructure as the channel, epitaxial Al as superconducting electrodes, and scaled …
heterostructure as the channel, epitaxial Al as superconducting electrodes, and scaled …
Challenges of 22 nm and beyond CMOS technology
R Huang, HM Wu, JF Kang, DY Xiao, XL Shi… - Science in China Series …, 2009 - Springer
It is predicted that CMOS technology will probably enter into 22 nm node around 2012.
Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and …
Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and …
Positive bias instability and recovery in InGaAs channel nMOSFETs
Instability of InGaAs channel nMOSFETs with the Al 2 O 3/ZrO 2 gate stack under positive
bias stress demonstrates recoverable and unrecoverable components, which can be …
bias stress demonstrates recoverable and unrecoverable components, which can be …