The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Synaptic devices, including synaptic memristor and synaptic transistor, are emerging
nanoelectronic devices, which are expected to subvert traditional data storage and …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

This paper reports the fundamentals and the SPICE implementation of the Dynamic
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …

While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and
cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits …

Dense crossbar arrays of non-volatile memory (NVM) can potentially enable massively
parallel and highly energy-efficient neuromorphic computing systems. The key requirements …

A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …