Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers
JW Tomm, A Bärwolff, T Elsaesser, J Luft - Applied Physics Letters, 2000 - pubs.aip.org
Mounting-induced defects in semiconductor quantum-well (QW) lasers are investigated by
photocurrent spectroscopy. The defects are located in the laser waveguides and give rise to …
photocurrent spectroscopy. The defects are located in the laser waveguides and give rise to …
Non-invasive optical assessment of packaging-induced defects in high-power laser diodes
A Barwolff, JW Tomm - 2000 Proceedings. 50th Electronic …, 2000 - ieeexplore.ieee.org
Packaging of laser chips or bars is a crucial technological process during production of high
power laser devices. The main goal of this process is to mount the semiconductor chip with …
power laser devices. The main goal of this process is to mount the semiconductor chip with …