Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
We report Negative Capacitance nFETs with a~ 1 nm effective oxide thickness (EOT) gate
stack. Experimental measurements show a clear steepening of the slope of the I DV G …
stack. Experimental measurements show a clear steepening of the slope of the I DV G …
[图书][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
[HTML][HTML] Negative capacitance transistors with monolayer black phosphorus
F Liu, Y Zhou, Y Wang, X Liu, J Wang, H Guo - npj Quantum Materials, 2016 - nature.com
Quantum transport properties of negative capacitance transistors (NC-FETs) with monolayer
black phosphorus (ML-BP) are theoretically studied. Our calculations show that atomistic …
black phosphorus (ML-BP) are theoretically studied. Our calculations show that atomistic …
[HTML][HTML] Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure
Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric
(DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was …
(DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was …
[图书][B] FinFET devices for VLSI circuits and systems
SK Saha - 2020 - taylorfrancis.com
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …
as the real alternative for use as the next generation device for IC fabrication technology …
Current-voltage model for negative capacitance field-effect transistors
In this letter, a semi-analytical current-voltage model for a negative capacitance field-effect
transistor (NCFET) with a ferroelectric material (ie, BaTiO 3) is proposed. Surface potential …
transistor (NCFET) with a ferroelectric material (ie, BaTiO 3) is proposed. Surface potential …
On the validity and applicability of models of negative capacitance and implications for MOS applications
The observation of room temperature sub-60mV/dec subthreshold slope (SS) in MOSFETs
with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much …
with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much …
Ferroelectric polymer thin films for organic electronics
The considerable investigations of ferroelectric polymer thin films have explored new
functional devices for flexible electronics industry. Polyvinylidene fluoride (PVDF) and its …
functional devices for flexible electronics industry. Polyvinylidene fluoride (PVDF) and its …
Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor
K Jang, N Ueyama, M Kobayashi… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
We have experimentally observed the negative-capacitance transient effect in a ferroelectric
HfZrO 2 (FE-HZO) capacitor and developed an equivalent circuit model based on the …
HfZrO 2 (FE-HZO) capacitor and developed an equivalent circuit model based on the …
The negative dielectric permittivity of polycrystalline barium titanate nanofilms under high-strength Khz-AC Fields
MR Zhang, Y Su - International Journal of Solids and Structures, 2022 - Elsevier
Unlike the conventional high-frequency dielectric behavior for which the amplitude of the
applied field is too small to cause polarization switching, the dynamically-driven polarization …
applied field is too small to cause polarization switching, the dynamically-driven polarization …