This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …

In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power
amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The …

We report a high-efficiency D-band power amplifier in 250nm InP HBT technology. The
design has three common-base stages and a low-loss 4: 1 transmission-line output power …

This letter presents a fully integrated three-stage single-ended D-band power amplifier (PA)
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …

This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-
nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is …

This letter presents a four-way power combined-band power amplifier (PA) in 0.13-SiGe
technology. The conventional cascode topology is modified by adding an additional …

We report a five-gain-stage 150–175-GHz solid-state power amplifier (PA, SSPA) monolithic
microwave integrated circuit (MMIC) having modest 20–21-dBm output power, high gain …

We report a five-gain-stage 150–175 GHz solid-state power amplifier (PA, SSPA) integrated
circuit (MMIC) having 23–24 dBm output power Pout, high gain, and high power-added …

Recent research in Future Wireless Networks (FWN) s have primarily focused on improving
spectral and energy efficiency, emphasizing less on reducing power consumption. Studies …