Dual-step selective homoepitaxy of Ge with low defect density and modulated strain based on optimized Ge/Si virtual substrate
B Xu, Y Du, G Wang, W Xiong, Z Kong, X Zhao, Y Miao… - Materials, 2022 - mdpi.com
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to
significantly decrease the defect density and to create fully strained relaxed Ge on a Si …
significantly decrease the defect density and to create fully strained relaxed Ge on a Si …