Extrinsic origins of the apparent relaxorlike behavior in CaCu3Ti4O12 ceramics at high temperatures: a cautionary tale

M Li, DC Sinclair, AR West - Journal of Applied Physics, 2011 - pubs.aip.org
Although the origins of the high effective permittivity observed in CaCu 3 Ti 4 O 12 (CCTO)
ceramics and single crystals at∼ 100–400 K have been resolved, the relaxorlike …

[HTML][HTML] Transfer functions of proteinoid microspheres

P Mougkogiannis, N Phillips, A Adamatzky - Biosystems, 2023 - Elsevier
Proteinoids, or thermal proteins, are inorganic entities formed by heating amino acids to their
melting point and commencing polymerisation to form polymeric chains. Typically, their …

Negative capacitance detected

G Catalan, D Jiménez, A Gruverman - Nature materials, 2015 - nature.com
Negative capacitance detected | Nature Materials Skip to main content Thank you for visiting
nature.com. You are using a browser version with limited support for CSS. To obtain the best …

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

S Samanta, U Chand, S Xu, K Han… - IEEE Electron …, 2020 - ieeexplore.ieee.org
We report high performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film
transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving …

A comprehensive review on FinFET in terms of its device structure and performance matrices

MN Reddy, DK Panda - Silicon, 2022 - Springer
The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

Switching-speed limitations of ferroelectric negative-capacitance FETs

ZC Yuan, S Rizwan, M Wong, K Holland… - … on Electron Devices, 2016 - ieeexplore.ieee.org
Recently, negative-capacitance FETs (NCFETs) have been proposed to reduce
subthreshold slope and help continue supply-voltage scaling alongside channel-length …

[HTML][HTML] Determination of the charge carrier density in organic solar cells: A tutorial

J Vollbrecht, N Tokmoldin, B Sun, VV Brus… - Journal of Applied …, 2022 - pubs.aip.org
The increase in the performance of organic solar cells observed over the past few years has
reinvigorated the search for a deeper understanding of the loss and extraction processes in …

Level spacing of random matrices in an external source

E Brézin, S Hikami - Physical Review E, 1998 - APS
In an earlier work we considered a Gaussian ensemble of random matrices in the presence
of a given external matrix source. The measure is no longer unitary invariant, and the usual …

Negative capacitance in organic semiconductor devices: Bipolar injection and charge recombination mechanism

E Ehrenfreund, C Lungenschmied, G Dennler… - Applied physics …, 2007 - pubs.aip.org
The authors report negative capacitance at low frequencies in organic semiconductor based
diodes and show that it appears only under bipolar injection conditions. They account …

Investigation of temperature dependent negative capacitance in the forward bias CV characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

ÇŞ Güçlü, AF Özdemir, A Karabulut, A Kökce… - Materials Science in …, 2019 - Elsevier
In this study, a metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs)
were fabricated by growing a thin Al 2 O 3 insulator layer between Au/Ti and n-GaAs using …