In this paper, the gate/drain voltage-dependent self-heating effect (SHE) in gate-all-around
(GAA) nanosheet field effect transistors (NSFETs) and FinFETs is investigated by 3-D TCAD …

The optimal inner spacer length () for each layer in nanosheet (NS) field-effect transistors
(FETs) was investigated using a technology computer-aided design (TCAD) simulation …

The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic
performance with its increased effective channel width. However, as the technology node …

In this study, the self-heating effect (SHE) of sub-3-nm node forksheet (FS) field-effect
transistors (FETs) and nanosheet (NS) FETs were systematically analyzed using a fully …

A practicable Si interlayers trimming strategy to attain thinned nanosheet (NS) using an in
situ steam generation (ISSG) oxidation and removal process has been proposed for Si and …

In this article, the effects of non-ideal cross-sectional shapes of stacked nanosheet FET
(NSFET) and nanosheet FET with inter-bridge channel (TreeFET) are studied through …

The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with
various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional …

In this work, we propose a SiC-NSFET structure that uses a PTS scheme only under the
gate, with SiC layers under the source and drain, to improve the leakage current and thermal …

In this work, we present a comprehensive study on the gate stack TDDB challenges in Gate-
all-around (GAA) nanosheet (NS) transistors (FETs), including volume-less Multiple Vt (Multi …

Bowing is one of plasma etching effects that negatively impact device performance.
Although there has been plenty of research work on micro-feature surface etch modeling to …