Effect of Cl2-and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy
S Bouchoule, L Vallier, G Patriarche… - Journal of Vacuum …, 2012 - pubs.aip.org
A Cl 2-HBr-O 2/Ar inductively coupled plasma (ICP) etching process has been adapted for
the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool …
the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool …
X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma
The chemical composition of the surface of InP samples etched in Cl 2 and Cl 2/Ar
inductively coupled plasma (ICP) is analyzed using ex-situ x-ray photoelectron spectroscopy …
inductively coupled plasma (ICP) is analyzed using ex-situ x-ray photoelectron spectroscopy …
Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS
S Bouchoule, R Chanson, A Pageau… - Journal of Vacuum …, 2015 - pubs.aip.org
Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface
chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled …
chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled …
Addition of Si-containing gases for anisotropic etching of III–V materials in chlorine-based inductively coupled plasma
L Gatilova, S Bouchoule, G Patriarche… - Japanese Journal of …, 2011 - iopscience.iop.org
We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl 2-and
HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH 4 …
HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH 4 …
[PDF][PDF] TECHNOLOGIES POUR SOURCES LASER A SEMICONDUCTEURS III-V
S Bouchoule - 2018 - theses.hal.science
A l'issue de ma thèse de doctorat, j'ai été recrutée au CNET, Laboratoire de Bagneux, dans
le département «Sources à Semi-Conducteurs», pour concevoir et fabriquer en salle …
le département «Sources à Semi-Conducteurs», pour concevoir et fabriquer en salle …
Transformational III-V Electronics
MA Nour - 2014 - repository.kaust.edu.sa
Flexible electronics using III-V materials for nano-electronics with high electron mobility and
optoelectronics with direct band gap are attractive for many applications. This thesis …
optoelectronics with direct band gap are attractive for many applications. This thesis …
[PDF][PDF] COMPOSANTS OPTIQUES A BASE DE CRISTAUX PHOTONIQUES POUR APPLICATIONS A L'IMAGERIE INFRAROUGE
F de Fornel Présidente - 2011 - pepite-depot.univ-lille.fr
Jusqu'alors dans ce manuscrit, nous nous sommes exclusivement intéressés au composant
optique" superlentille" à base de cristaux photoniques. De manière plus générale, les …
optique" superlentille" à base de cristaux photoniques. De manière plus générale, les …