Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

Nitride-based three-dimensional core–shell nanorods (NRs) are promising candidates for
the achievement of highly efficient optoelectronic devices. For a detailed understanding of …

The optical properties of InGaN/GaN core-shell microrods are studied by time-resolved
cathodoluminescence. Probing the carrier dynamics along the length of the rod from 4 to …

Selective area growth of Ga-polar GaN nanowires by metal organic chemical vapor
deposition provides a path to achieve arrays of uniform nanowires with controllable …

We analyse the electrical and optical properties of single GaN nanowire p–n junctions
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as doping …

We investigate, via temperature and excitation density dependent quasi-resonant confocal
micro-photoluminescence, the optical properties and internal quantum efficiency (IQE) of …

Carrier diffusion properties, including the diffusion length, diffusion coefficient, and carrier
lifetime are important for photonic devices. In nitride semiconductors, there are many …

Raman measurement was applied to investigate the carrier concentration distribution along
the [0001] direction of single GaN microrod. By measuring the Raman shifts of longitudinal …

We study the influence of local inhomogeneities on carrier recombination dynamics in single
InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence …

The strong polarization effects and abundant surface states in III-nitrides result in a tunable
electric field, modifying the absorption/emission by changing the band structure. Thus, the …