Over the past decade, tremendous progress has been achieved in the development of
nanoscale semiconductor materials with a wide range of bandgaps by alloying different …

Semiconductor nanowires have become an important building block for nanotechnology.
The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid …

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to
integrate vertical InAs nanowires on Si by modifying initial Si (111) surface in selective-area …

Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable
aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy …

We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires
directly on Si (111) substrates. The growth is catalyzed by liquid Ga droplets formed in the …

Advances in nanofabrication, characterization tools, and the drive to commercialize
nanotechnology products have contributed to the significant increase in research on …

III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …

We report on selective-area growth of vertically aligned GaAs nanowires on Si (111)
substrate. Modification of the initial Si (111) surface by pretreatment under an AsH 3 …

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on
graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by …