InP bulk crystal growth and characterization

JS Szmyd, K Suzuki - 2000 - researchgate.net

Abstract Analysis that includes both back-diffusion into the solid and final redistribution of the
solute is formulated. 2D morphology is assumed for the considered crystal growth in the …

被引用次数：15 相关文章所有 3 个版本

Indium phosphide

DF Bliss, R Fornari - Single Crystals of Electronic Materials, 2019 - Elsevier

Since the 1970s the growth of indium phosphide (InP) single crystals has evolved from
being a laboratory curiosity to become a commercial product with worldwide applications …

被引用次数：5 相关文章所有 2 个版本

InP 中的深能级杂质与缺陷(续)

孙聂枫，赵有文，孙同年 - 微纳电子技术, 2008 - cqvip.com

4.1 掺Fe SI-InP 形成机理通常SI—InP 是通过在晶体生长过程中掺入一定量的Fe 来制备的.
人们利用变温霍尔, 光电导, 深能级瞬态谱, 光激瞬态电流谱等方法进行的大量研究测试结果表明 …

被引用次数：1 相关文章所有 2 个版本

Evaluation of 4" InP (Fe) substrates for production of HBTs

DA Clark - GaAs IC Symposium. IEEE Gallium Arsenide …, 2001 - ieeexplore.ieee.org

Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless,
cellular and fiber optic telecommunication systems is creating a need for high quality, large …

被引用次数：5 相关文章

Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields

DF Bliss - Springer Handbook of Crystal Growth, 2010 - Springer

The application of steady magnetic fields during crystal growth of indium phosphide is
described, and the effect of the magnetic fields on crystal properties is analyzed. The use of …

被引用次数：2 相关文章所有 4 个版本

Synchrotron X-ray topographic characterization of defects in InP bulk crystals

G Dhanaraj, B Raghothamachar, J Bai… - International …, 2005 - ieeexplore.ieee.org

Synchrotron X-ray topographic characterization of defects in InP bulk crystals Page 1 2005
International Conference on Indium Phosphide and Related Materials SYNCHROTRON X-RAY …

被引用次数：1 相关文章所有 2 个版本

Numerical Studies of Semiconductor Materials Solidification With Applied Electric and Magnetic Fields

P Zhang, L Zheng, G Iseler… - ASME …, 2001 - asmedigitalcollection.asme.org

This paper presents one part of a concerted effort to understand the solidification and crystal
growth of semiconductor materials using the bottom-seeded growth technique with …