The complex dielectric function ε (ω) of GaAs was measured from 20 to 750 K with a
scanning rotating-analyzer ellipsometer. The structures observed in the 1.3–5.5-eV photon …

We investigate the Raman spectrum of the low-temperature orthorhombic phase of the
organic–inorganic halide perovskite CH3NH3PbI3, by combining first-principles calculations …

This paper reviews experimental and theoretical results on superlattice phonons in GaAs-Al
x Ga 1-x As structures. Emphasis is given to the phonon confinement problem and its …

A theory of one-phonon resonant Raman scattering in diamond and zinc-blende-type
semiconductors which includes excitonic effects has been developed. The theory can be …

An explicit expression for forbidden Raman scattering by one LO phonon with excitons as
intermediate states is given. The theory can be applied at photon frequencies below and …

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid
method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant …

Detection mechanisms of coherent phonons in variously doped GaAs are investigated by
transient reflectivity method with photoexcitation near the E 0 gap and probe near either the …

The complex dielectric function ε (ω) of Al x Ga 1− x As was studied in the 1.4–5.6-eV photon
energy region and between 12 and 800 K. By performing a line-shape analysis of the …

We have conducted an extensive Raman scattering study of the effects hydrostatic pressure
has on Al x Ga 1− x As alloy phonons for 0⩽ x⩽ 0.70. The mode-Grüneisen parameter γ is …

A theoretical model of resonant Raman scattering including excitons as intermediate states
in the process is compared with recent experimental results in some III-V compound …