Statistical investigation of SnOx RRAM memories for switching characteristics

A Panca, A Serb, S Stathopoulos… - 2024 IEEE 36th …, 2024 - ieeexplore.ieee.org
Resistive Random Access Memory (RRAM) has seen significant developments in the past
years. An important improvement is to reduce the device-to-device variability that limits …

Information Density in Multi-Layer Resistive Memories

SE Rumsey, SC Draper… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Resistive memories store information in a crossbar arrangement of two-terminal devices that
can be programmed to patterns of high or low resistance. While extremely compact, this …

Dataset supporting University of Southampton Doctoral thesis' Memristor-based Spiking Neural Networks'

J Huang - 2022 - eprints.soton.ac.uk
Dataset for the thesis' Memristor-based Spiking Neural Networks'. This dataset contains two
Github repositories containing the original source code for content in Chapt 4 & 5 of the …

Measured behaviour of a memristor‐based tuneable instrumentation amplifier

F Yang, A Serb, T Prodromakis - Electronics Letters, 2022 - Wiley Online Library
A memristor‐based tuneable instrumentation amplifier whose gain value can be adjusted by
memristor is implemented and measured. While memristive devices are suitable for …

Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories

T Brożek, D Ciplickas - IEEE Journal of the Electron Devices …, 2019 - ieeexplore.ieee.org
Emerging non-volatile memories are becoming increasingly attractive for embedded and
storage-class applications. Among the development challenges of Back-End integrated …

Ferroelectric memristive networks for dimensionality reduction: A process for effectively classifying cancer datasets

PMP Raj, VJ Louis, SK Chatterjee… - Integrated …, 2019 - Taylor & Francis
In this work, a copper-doped (5%) zinc oxide (Cu: ZnO) ferroelectric materials-based
memristor model was realized and it was employed to develop principal component analysis …

An analogue-domain, switch-capacitor-based arithmetic-logic unit

A Serb, T Prodromakis - 2019 IEEE International Symposium …, 2019 - ieeexplore.ieee.org
The continuous maturation of novel nanoelectronic devices exhibiting finely tuneable
resistive switching is rekindling interest in analogue-domain computation. Regardless of …

Многоуровневые мемристивные структуры на основе эпитаксиальных пленок YBa 2 Cu 3 O 7–δ

НА Тулина, АН Россоленко, ИЮ Борисенко… - …, 2023 - journals.rcsi.science
Представлены импульсные исследования переходных процессов в эффекте
резистивных переключениях в планарных гетероконтактах на основе сильно …

Metal-TiO2 contacts: An electrical characterization study

L Michalas, A Khiat, S Stathopoulos… - arXiv preprint arXiv …, 2017 - arxiv.org
The electrical properties of thin TiO2 films have recently been extensively exploited towards
enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices …

Design of an FPGA-based RRAM parameter measurement platform

ZE Kaya, SB Tekin, S Kalem - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
Flash memory has been the dominant technology in non-volatile memory market for the last
couple of decades. Along with down-scaling in the CMOS manufacturing process, industry …