Plasmonic semiconductors: materials, tunability and applications
Semiconductor plasmonics has become a frontier for light manipulation beyond the
diffraction limit, offering a broader spectral range and higher flexibility of plasmon …
diffraction limit, offering a broader spectral range and higher flexibility of plasmon …
Native defects association enabled room-temperature p-type conductivity in β-Ga2O3
The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga 2 O
3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices …
3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices …
[HTML][HTML] High conductivity β-Ga2O3 formed by hot Si ion implantation
This work demonstrates the advantage of carrying out silicon ion (Si+) implantation at high
temperatures for forming controlled heavily doped regions in gallium oxide. Room …
temperatures for forming controlled heavily doped regions in gallium oxide. Room …
[HTML][HTML] Electrolyte-gate-driven carrier density modulation and metal–insulator transition in semiconducting epitaxial CdO films
H Wang, WM Postiglione, V Chaturvedi… - APL Materials, 2022 - pubs.aip.org
CdO has drawn much recent interest as a high-room-temperature-mobility oxide
semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide …
semiconductor with exciting potential for mid-infrared photonics and plasmonics. Wide …
Rationally Engineered Vertically Aligned β‐Ga2−xWxO3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response
With the astonishing advancement of present technology and increasing energy
consumption, there is an ever‐increasing demand for energy‐efficient multifunctional …
consumption, there is an ever‐increasing demand for energy‐efficient multifunctional …
β-Ga2O3 van der Waals pn homojunction
Y Zhao, Z Wu, C Liu, X Yue, J Chen, C Cong… - Materials Today …, 2024 - Elsevier
The van der Waals (vdW) pn junctions are crucial to develop multifunctional and high-
performance electronic and optoelectronic devices. The asymmetric doping effect in wide …
performance electronic and optoelectronic devices. The asymmetric doping effect in wide …
Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta
Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic …
Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic …
Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC
J Chahal, N Rahbany, Y El-Helou, KT Wu… - Journal of Physics and …, 2024 - Elsevier
Polarized infrared reflectivity spectroscopy is used to measure the temperature dependence
of the anisotropy of the infrared dielectric properties and the coupling between phonon and …
of the anisotropy of the infrared dielectric properties and the coupling between phonon and …
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A …
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A …
Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1− x) 2O3/Ga2O3 heterostructures
A Kumar, U Singisetti - Journal of Applied Physics, 2022 - pubs.aip.org
β-Gallium oxide (Ga 2 O 3) is an extensively investigated ultrawide-bandgap
semiconductor for potential applications in power electronics and radio frequency switching …
semiconductor for potential applications in power electronics and radio frequency switching …