V Depauw, C Porret, M Moelants… - Progress in …, 2023 - Wiley Online Library
Germanium is listed as a critical raw material, and for environmental and economic sustainability reasons, strategies for lower consumption must be implemented. A promising …
The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition …
In this theoretical study we investigate the electronic, optical, and photocatalytic properties of monolayer titanium dioxide (TiO2), nickel dioxide (NiO2), and germanium dioxide (GeO2) …
In this paper, hexagonal germanium dioxide (GeO 2) nanostructures with different morphologies and sizes were successfully synthesized by a simple and fast …
Abstract Recently, porous Germanium (PGe) structures have gained significant attention as a promising engineering material for a broad range of applications due to the versatility of its …
High-quality germanium epilayers on Si with low threading-dislocation density were achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …
V Kidalov, N Sosnytska, A Dyadenchuk… - International Journal of …, 2021 - ijmph.kaznu.kz
This work is focused on the creation and study of photosensitive structures based on zinc oxide nanofibers, which are promising for solar energy. Zinc oxide nanowires were obtained …
The use promising group III-V materials for photovoltaic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, we present …
YA Bioud, M Rondeau, A Boucherif… - arXiv preprint arXiv …, 2021 - arxiv.org
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole …