Achieving porous germanium from both p-and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Y Zhu, Y Zhang, B Li, GM Xia, RT Wen - Electrochimica Acta, 2023 - Elsevier
Due to the large surface specific area, tunable porosity and refractive index, porous
germanium (Ge) has wide applications in optoelectronics, photovoltaics, anode materials in …

Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells

V Depauw, C Porret, M Moelants… - Progress in …, 2023 - Wiley Online Library
Germanium is listed as a critical raw material, and for environmental and economic
sustainability reasons, strategies for lower consumption must be implemented. A promising …

[HTML][HTML] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov, A Soltani… - Nature …, 2019 - nature.com
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Effect of strain and stacking on electronic structure, optical and photocatalytic performance of monolayer XO2 (X = Ti, Ni and Ge)

S Riaz, M Gul, F Khan, I Ahmad, M Ilyas - Applied Physics A, 2023 - Springer
In this theoretical study we investigate the electronic, optical, and photocatalytic properties of
monolayer titanium dioxide (TiO2), nickel dioxide (NiO2), and germanium dioxide (GeO2) …

[HTML][HTML] Shape control of cathodized germanium oxide nanoparticles

YA Bioud, E Paradis, A Boucherif, D Drouin… - Electrochemistry …, 2021 - Elsevier
In this paper, hexagonal germanium dioxide (GeO 2) nanostructures with different
morphologies and sizes were successfully synthesized by a simple and fast …

[HTML][HTML] Wafer-Scale Porous Germanium Bilayer Structure Formation by Fast Bipolar Electrochemical Etching

L Mouchel, B Ilahi, J Cho, K Dessein, A Boucherif - Thin Solid Films, 2024 - Elsevier
Abstract Recently, porous Germanium (PGe) structures have gained significant attention as
a promising engineering material for a broad range of applications due to the versatility of its …

Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation

YA Bioud, M Rondeau, A Boucherif, G Patriarche… - Acta Materialia, 2020 - Elsevier
High-quality germanium epilayers on Si with low threading-dislocation density were
achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …

ZnO nanowires for photoelectric converter applications

V Kidalov, N Sosnytska, A Dyadenchuk… - International Journal of …, 2021 - ijmph.kaznu.kz
This work is focused on the creation and study of photosensitive structures based on zinc
oxide nanofibers, which are promising for solar energy. Zinc oxide nanowires were obtained …

Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon

YA Bioud, A Boucherif, G Patriarche… - AIP Conference …, 2020 - pubs.aip.org
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …

Dynamic formation of spherical voids crossing linear defects

YA Bioud, M Rondeau, A Boucherif… - arXiv preprint arXiv …, 2021 - arxiv.org
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported.
We represent an idealized etched dislocation core as an axially symmetric elongated hole …