Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …

A series of lithium niobate crystals co-doped with uranium and indium was successfully
grown by the modified vertical Bridgman method for the first time. With increasing In3+ ion …

Graphene–semiconductor junction interface states influence the carrier recombination
processes in emerging optoelectronic devices. The large density of interface states in the …

The paper presents the results of structural and photoluminescent (PL) studies of porous
GaAs layers created by electrochemical etching of GaAs wafers. Structural and …

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and
are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed …

In this paper, we investigate the structural and photoluminescence properties of aqueous
solution-processed ZnO/GaAs and ZnO/porous GaAs films. According to X-ray diffraction …

In this paper, we present the results of structural and room temperature photoluminescence
studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was …

In this paper, electrochemical anodization was used to fabricate porous layers on n-type
GaAs substrates with different orientations, ie,(511) A,(100) and (111) B, under the same …

The article analyzes the morphological characteristics of a porous GaP surface layer formed
on the surface of monocrystalline gallium phosphide by electrochemical etching. The …

The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …